KSC3503DSTU
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- Mfr.Part #
- KSC3503DSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO126-3
- Stock
- 5,701
- In Stock ：
- 5,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KSC3503
- Element Configuration :
- Single
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 300V
- Transition Frequency :
- 150MHz
- Published :
- 2005
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 100mA
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 40
- Weight :
- 761mg
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 10V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Length :
- 8mm
- Max Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 6 Weeks
- Height :
- 11mm
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 7W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Width :
- 3.25mm
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 7W
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSC3503DSTU
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSC3503DSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 10V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
KSC3503DSTU Features
the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz
KSC3503DSTU Applications
There are a lot of ON Semiconductor
KSC3503DSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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