KSC3503DSTU
- Mfr.Part #
- KSC3503DSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO126-3
- Stock
- 5,701
- In Stock :
- 5,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Voltage - Rated DC :
- 300V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 7W
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 10V
- Pbfree Code :
- yes
- Weight :
- 761mg
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Base Part Number :
- KSC3503
- Collector Base Voltage (VCBO) :
- 300V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 40
- Frequency :
- 150MHz
- Height :
- 11mm
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Length :
- 8mm
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 3.25mm
- Transistor Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 300V
- Published :
- 2005
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 7W
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Current Rating :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- KSC3503DSTU

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSC3503DSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 10V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
KSC3503DSTU Features
the DC current gain for this device is 40 @ 10mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 150MHz
KSC3503DSTU Applications
There are a lot of ON Semiconductor
KSC3503DSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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