KSC3502ES
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- Mfr.Part #
- KSC3502ES
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.1A TO126-3
- Stock
- 47,156
- In Stock ：
- 47,156
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 150MHz
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 1.2W
- Packaging :
- Bulk
- Supplier Device Package :
- TO-126-3
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector (Ic) (Max) :
- 100mA
- Datasheets
- KSC3502ES
NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSC3502ES Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Supplier device package TO-126-3 comes with the product.The device exhibits a collector-emitter breakdown at 200V.
KSC3502ES Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the supplier device package of TO-126-3
KSC3502ES Applications
There are a lot of ON Semiconductor
KSC3502ES applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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