KSA1156YSTSTU
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- Mfr.Part #
- KSA1156YSTSTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.5A TO126-3
- Stock
- 37,893
- In Stock ：
- 37,893
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -400V
- Current Rating :
- -500mA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10mA, 100mA
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -7V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 400V
- hFE Min :
- 30
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 5000ns
- Mount :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -1V
- Weight :
- 758mg
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Package / Case :
- TO-225AA, TO-126-3
- Base Part Number :
- KSA1156
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 500mA
- Datasheets
- KSA1156YSTSTU
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
KSA1156YSTSTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10mA, 100mA.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSA1156YSTSTU Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at -7V
the current rating of this device is -500mA
KSA1156YSTSTU Applications
There are a lot of ON Semiconductor
KSA1156YSTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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