JANTXV2N7228U
- Mfr.Part #
- JANTXV2N7228U
- Manufacturer
- Microsemi
- Package / Case
- TO-267AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO267AB
- Stock
- 15,018
- In Stock :
- 15,018
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- High Reliability
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 48A
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 515m Ω @ 12A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1997
- Pbfree Code :
- No
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-276AB
- Drain-source On Resistance-Max :
- 0.515Ohm
- Package / Case :
- TO-267AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Qualified
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Reference Standard :
- MIL-19500
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 500V
- Terminal Form :
- NO LEAD
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Series :
- Military, MIL-PRF-19500/592
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Bulk
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- JANTXV2N7228U
N-Channel Bulk 515m Ω @ 12A, 10V ±20V 120nC @ 10V 500V TO-267AB
JANTXV2N7228U Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 750 mJ.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
JANTXV2N7228U Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)
JANTXV2N7228U Applications
There are a lot of Microsemi Corporation
JANTXV2N7228U applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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