JANTXV2N7228
- Mfr.Part #
- JANTXV2N7228
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO254AA
- Stock
- 40,056
- In Stock :
- 40,056
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Pulsed Drain Current-Max (IDM) :
- 48A
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- Reference Standard :
- MIL
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 515m Ω @ 12A, 10V
- Vgs (Max) :
- ±20V
- Qualification Status :
- Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1997
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 12A
- Drain-source On Resistance-Max :
- 0.415Ohm
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Mount :
- Through Hole
- Series :
- Military, MIL-PRF-19500/592
- Drain to Source Voltage (Vdss) :
- 500V
- Datasheets
- JANTXV2N7228
N-Channel Bulk 515m Ω @ 12A, 10V ±20V 120nC @ 10V 500V TO-254-3, TO-254AA (Straight Leads)
JANTXV2N7228 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
JANTXV2N7228 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)
JANTXV2N7228 Applications
There are a lot of Microsemi Corporation
JANTXV2N7228 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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