JANTXV2N7227
- Mfr.Part #
- JANTXV2N7227
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 14A TO254AA
- Stock
- 13,658
- In Stock :
- 13,658
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Military, MIL-PRF-19500/592
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 400V
- Drain to Source Voltage (Vdss) :
- 400V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 14A
- Rds On (Max) @ Id, Vgs :
- 415m Ω @ 14A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Reference Standard :
- MIL
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 1997
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Terminal Form :
- PIN/PEG
- Qualification Status :
- Qualified
- Packaging :
- Bulk
- Terminal Position :
- Single
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 4W Ta 150W Tc
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Pulsed Drain Current-Max (IDM) :
- 56A
- Datasheets
- JANTXV2N7227
N-Channel Bulk 415m Ω @ 14A, 10V ±20V 110nC @ 10V 400V TO-254-3, TO-254AA (Straight Leads)
JANTXV2N7227 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
JANTXV2N7227 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)
JANTXV2N7227 Applications
There are a lot of Microsemi Corporation
JANTXV2N7227 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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