JANTXV2N7224U
- Mfr.Part #
- JANTXV2N7224U
- Manufacturer
- Microsemi
- Package / Case
- TO-267AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 34A TO267AB
- Stock
- 25,783
- In Stock :
- 25,783
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- HTS Code :
- 8541.29.00.95
- Rds On (Max) @ Id, Vgs :
- 81m Ω @ 34A, 10V
- Mount :
- Surface Mount
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-276AB
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.081Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Rise Time :
- 190ns
- Packaging :
- Bulk
- Pin Count :
- 3
- Turn On Delay Time :
- 35 ns
- DS Breakdown Voltage-Min :
- 100V
- Terminal Position :
- BOTTOM
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-267AB
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Case Connection :
- DRAIN
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/592
- Number of Elements :
- 1
- Published :
- 1997
- Continuous Drain Current (ID) :
- 34A
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Reference Standard :
- MIL-19500/592
- Turn-Off Delay Time :
- 170 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 130 ns
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Datasheets
- JANTXV2N7224U
N-Channel Bulk 81m Ω @ 34A, 10V ±20V 125nC @ 10V 100V TO-267AB
JANTXV2N7224U Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 170 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JANTXV2N7224U Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 34A
the turn-off delay time is 170 ns
a 100V drain to source voltage (Vdss)
JANTXV2N7224U Applications
There are a lot of Microsemi Corporation
JANTXV2N7224U applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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