JANTXV2N6849

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

320m Ω @ 6.5A, 10V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Qualified

RoHS Status :

Non-RoHS Compliant

Series :

Military, MIL-PRF-19500/564

Power Dissipation :

800mW

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

ECCN Code :

EAR99

Package / Case :

TO-205AF Metal Can

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Contact Plating :

Lead, Tin

Pbfree Code :

No

Continuous Drain Current (ID) :

6.5A

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

25A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Additional Feature :

RADIATION HARDENED

Avalanche Energy Rating (Eas) :

500 mJ

Published :

1997

JESD-609 Code :

e0

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

MILITARY STANDARD (USA)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Power Dissipation-Max :

800mW Ta 25W Tc

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Transistor Application :

SWITCHING

Number of Elements :

1