JANTXV2N6804
- Mfr.Part #
- JANTXV2N6804
- Manufacturer
- Microsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 11A TO204AA
- Stock
- 21,921
- In Stock :
- 21,921
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- Military, MIL-PRF-19500/562
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 11A, 10V
- Rise Time :
- 140ns
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Package / Case :
- TO-204AA, TO-3
- JESD-609 Code :
- e0
- JESD-30 Code :
- O-MBFM-P2
- Qualification Status :
- Qualified
- Avalanche Energy Rating (Eas) :
- 81 mJ
- HTS Code :
- 8541.29.00.95
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 4W Ta 75W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Reference Standard :
- MIL-19500
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 11A
- Pulsed Drain Current-Max (IDM) :
- 50A
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- Published :
- 1997
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100V
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Datasheets
- JANTXV2N6804
P-Channel Bulk 360m Ω @ 11A, 10V ±20V 29nC @ 10V 100V TO-204AA, TO-3
JANTXV2N6804 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 81 mJ.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
JANTXV2N6804 Features
the avalanche energy rating (Eas) is 81 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 50A.
a 100V drain to source voltage (Vdss)
JANTXV2N6804 Applications
There are a lot of Microsemi Corporation
JANTXV2N6804 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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