JANTXV2N6802U
- Mfr.Part #
- JANTXV2N6802U
- Manufacturer
- Microsemi
- Package / Case
- 18-CLCC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.5A 18ULCC
- Stock
- 30,258
- In Stock :
- 30,258
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Published :
- 1997
- Turn On Delay Time :
- 30 ns
- Rise Time :
- 30ns
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- JESD-30 Code :
- R-CQCC-N15
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 15
- Reference Standard :
- MIL-19500/557
- Terminal Position :
- QUAD
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Packaging :
- Bulk
- Package / Case :
- 18-CLCC
- DS Breakdown Voltage-Min :
- 500V
- Qualification Status :
- Qualified
- Power Dissipation-Max :
- 800mW Ta 25W Tc
- Fall Time (Typ) :
- 30 ns
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 1.725Ohm
- Pulsed Drain Current-Max (IDM) :
- 11A
- Turn-Off Delay Time :
- 55 ns
- Series :
- Military, MIL-PRF-19500/557
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2.5A, 10V
- Avalanche Energy Rating (Eas) :
- 0.31 mJ
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- SOURCE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Continuous Drain Current (ID) :
- 2.5A
- Datasheets
- JANTXV2N6802U
N-Channel Bulk 1.6 Ω @ 2.5A, 10V ±20V 33nC @ 10V 500V 18-CLCC
JANTXV2N6802U Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.31 mJ.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 11A.A turn-on delay time of 30 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
JANTXV2N6802U Features
the avalanche energy rating (Eas) is 0.31 mJ
a continuous drain current (ID) of 2.5A
the turn-off delay time is 55 ns
based on its rated peak drain current 11A.
a 500V drain to source voltage (Vdss)
JANTXV2N6802U Applications
There are a lot of Microsemi Corporation
JANTXV2N6802U applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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