JANTXV2N6802U

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Mfr.Part #
JANTXV2N6802U
Manufacturer
Microsemi
Package / Case
18-CLCC
Datasheet
Download
Description
MOSFET N-CH 500V 2.5A 18ULCC
Stock
30,258
In Stock :
30,258

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Published :
1997
Turn On Delay Time :
30 ns
Rise Time :
30ns
Mount :
Surface Mount
FET Type :
N-Channel
JESD-30 Code :
R-CQCC-N15
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Number of Elements :
1
Drain to Source Voltage (Vdss) :
500V
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
15
Reference Standard :
MIL-19500/557
Terminal Position :
QUAD
Current - Continuous Drain (Id) @ 25°C :
2.5A Tc
Packaging :
Bulk
Package / Case :
18-CLCC
DS Breakdown Voltage-Min :
500V
Qualification Status :
Qualified
Power Dissipation-Max :
800mW Ta 25W Tc
Fall Time (Typ) :
30 ns
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
1.725Ohm
Pulsed Drain Current-Max (IDM) :
11A
Turn-Off Delay Time :
55 ns
Series :
Military, MIL-PRF-19500/557
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 Ω @ 2.5A, 10V
Avalanche Energy Rating (Eas) :
0.31 mJ
RoHS Status :
Non-RoHS Compliant
Transistor Element Material :
SILICON
Radiation Hardening :
No
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
SOURCE
Vgs(th) (Max) @ Id :
4V @ 250µA
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Continuous Drain Current (ID) :
2.5A
Datasheets
JANTXV2N6802U
Introducing Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6802U from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:15, Package / Case:18-CLCC, JANTXV2N6802U pinout, JANTXV2N6802U datasheet PDF, JANTXV2N6802U amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6802U ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 1.6 Ω @ 2.5A, 10V ±20V 33nC @ 10V 500V 18-CLCC

JANTXV2N6802U Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.31 mJ.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 11A.A turn-on delay time of 30 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

JANTXV2N6802U Features


the avalanche energy rating (Eas) is 0.31 mJ
a continuous drain current (ID) of 2.5A
the turn-off delay time is 55 ns
based on its rated peak drain current 11A.
a 500V drain to source voltage (Vdss)


JANTXV2N6802U Applications


There are a lot of Microsemi Corporation
JANTXV2N6802U applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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