JANTXV2N6802

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

800mW Ta 25W Tc

Case Connection :

DRAIN

Series :

Military, MIL-PRF-19500/557

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Reference Standard :

MIL-19500

Factory Lead Time :

30 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Qualified

Package / Case :

TO-205AF Metal Can

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

500V

Terminal Form :

Wire

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Continuous Drain Current (ID) :

2.5A

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

11A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

JESD-609 Code :

e0

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.5A, 10V

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

HTS Code :

8541.21.00.95

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Pins :

3