JANTXV2N6800U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

400V

Package / Case :

18-CLCC

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

34.75nC @ 10V

Drain to Source Voltage (Vdss) :

400V

Series :

Military, MIL-PRF-19500/557

Continuous Drain Current (ID) :

3A

JESD-30 Code :

R-CQCC-N15

Turn On Delay Time :

30 ns

Turn-Off Delay Time :

35 ns

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Drain-source On Resistance-Max :

1.15Ohm

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Packaging :

Bulk

Fall Time (Typ) :

35 ns

Vgs (Max) :

±20V

FET Type :

N-Channel

Qualification Status :

Qualified

RoHS Status :

Non-RoHS Compliant

Reference Standard :

MIL-19500/557

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Rise Time :

35ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

15

Drain Current-Max (Abs) (ID) :

3A

Terminal Position :

QUAD

Avalanche Energy Rating (Eas) :

0.51 mJ

Power Dissipation-Max :

800mW Ta 25W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE