JANTXV2N6800

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Package / Case :

TO-205AF Metal Can

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

400V

Drain to Source Voltage (Vdss) :

400V

Drain Current-Max (Abs) (ID) :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Packaging :

Bulk

Terminal Finish :

Tin/Lead (Sn/Pb)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

14A

Additional Feature :

High Reliability

Power Dissipation-Max :

800mW Ta 25W Tc

Transistor Element Material :

SILICON

Reference Standard :

MIL-19500

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Qualification Status :

Qualified

HTS Code :

8541.21.00.95

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3A

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Terminal Position :

BOTTOM

Series :

Military, MIL-PRF-19500/557

FET Type :

N-Channel

Terminal Form :

Wire

Number of Pins :

3

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

34.75nC @ 10V