JANTXV2N6798

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

42.07nC @ 10V

JESD-609 Code :

e0

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

Additional Feature :

High Reliability

HTS Code :

8541.21.00.95

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Package / Case :

TO-205AF Metal Can

Qualification Status :

Qualified

Power Dissipation-Max :

800mW Ta 25W Tc

Terminal Finish :

Tin/Lead (Sn/Pb)

Reference Standard :

MIL-19500

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.42Ohm

Number of Elements :

1

Series :

Military, MIL-PRF-19500/557

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

420m Ω @ 5.5A, 10V

Case Connection :

DRAIN

Published :

1997

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

5.5A

Terminal Form :

Wire

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

200V