JANTXV2N6796U
- Mfr.Part #
- JANTXV2N6796U
- Manufacturer
- Microsemi
- Package / Case
- 18-CLCC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8A 18ULCC
- Stock
- 38,446
- In Stock :
- 38,446
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 100V
- Reference Standard :
- MIL-19500/557
- Package / Case :
- 18-CLCC
- Rds On (Max) @ Id, Vgs :
- 195m Ω @ 8A, 10V
- Contact Plating :
- Lead, Tin
- Series :
- Military, MIL-PRF-19500/557
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 134 mJ
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.195Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Drain Current-Max (Abs) (ID) :
- 8A
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Power Dissipation-Max :
- 800mW Ta 25W Tc
- Packaging :
- Bulk
- FET Type :
- N-Channel
- Pin Count :
- 16
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Terminal Position :
- QUAD
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 15
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 32A
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- SOURCE
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 28.51nC @ 10V
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 1997
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Continuous Drain Current (ID) :
- 8A
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-CQCC-N15
- Additional Feature :
- High Reliability
- Datasheets
- JANTXV2N6796U
N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC
JANTXV2N6796U Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 134 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Peak drain current is 32A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
JANTXV2N6796U Features
the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)
JANTXV2N6796U Applications
There are a lot of Microsemi Corporation
JANTXV2N6796U applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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