JANTXV2N6796U

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Mfr.Part #
JANTXV2N6796U
Manufacturer
Microsemi
Package / Case
18-CLCC
Datasheet
Download
Description
MOSFET N-CH 100V 8A 18ULCC
Stock
38,446
In Stock :
38,446

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
100V
Reference Standard :
MIL-19500/557
Package / Case :
18-CLCC
Rds On (Max) @ Id, Vgs :
195m Ω @ 8A, 10V
Contact Plating :
Lead, Tin
Series :
Military, MIL-PRF-19500/557
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
134 mJ
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.195Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
No
Drain Current-Max (Abs) (ID) :
8A
Qualification Status :
Qualified
Transistor Application :
SWITCHING
Terminal Form :
NO LEAD
Power Dissipation-Max :
800mW Ta 25W Tc
Packaging :
Bulk
FET Type :
N-Channel
Pin Count :
16
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Terminal Position :
QUAD
ECCN Code :
EAR99
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
15
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
32A
RoHS Status :
Non-RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Case Connection :
SOURCE
Drain to Source Voltage (Vdss) :
100V
Gate Charge (Qg) (Max) @ Vgs :
28.51nC @ 10V
Vgs (Max) :
±20V
Terminal Finish :
Tin/Lead (Sn/Pb)
Published :
1997
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e0
Continuous Drain Current (ID) :
8A
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-CQCC-N15
Additional Feature :
High Reliability
Datasheets
JANTXV2N6796U
Introducing Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6796U from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:18-CLCC, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:15, JANTXV2N6796U pinout, JANTXV2N6796U datasheet PDF, JANTXV2N6796U amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6796U ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC

JANTXV2N6796U Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 134 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Peak drain current is 32A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

JANTXV2N6796U Features


the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)


JANTXV2N6796U Applications


There are a lot of Microsemi Corporation
JANTXV2N6796U applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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