JANTXV2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Package / Case :

TO-205AF Metal Can

Pulsed Drain Current-Max (IDM) :

14A

Qualification Status :

Qualified

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

1997

JESD-30 Code :

O-MBCY-W3

Number of Elements :

1

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.8Ohm

Case Connection :

DRAIN

JEDEC-95 Code :

TO-39

Mounting Type :

Through Hole

Configuration :

Single

Terminal Form :

Wire

Reference Standard :

MILITARY STANDARD (USA)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.5A, 10V

Drain to Source Voltage (Vdss) :

200V

Mount :

Through Hole

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

800mW Tc

Continuous Drain Current (ID) :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

Military, MIL-PRF-19500/555

Packaging :

Bulk

Additional Feature :

RADIATION HARDENED

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V