JANTXV2N6784U

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Mfr.Part #
JANTXV2N6784U
Manufacturer
Microsemi
Package / Case
18-CLCC
Datasheet
Download
Description
MOSFET N-CH 200V 2.25A 18ULCC
Stock
26,432
In Stock :
26,432

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
200V
Package / Case :
18-CLCC
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
1.6 Ω @ 2.25A, 10V
Case Connection :
SOURCE
Qualification Status :
Qualified
Reference Standard :
MIL-19500/556
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-CQCC-N15
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Series :
Military, MIL-PRF-19500/556
Number of Terminations :
15
Drain-source On Resistance-Max :
1.725Ohm
Power Dissipation-Max :
800mW Ta 15W Tc
Packaging :
Bulk
Current - Continuous Drain (Id) @ 25°C :
2.25A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
1997
Terminal Form :
NO LEAD
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
8.6nC @ 10V
Continuous Drain Current (ID) :
2.25A
Pulsed Drain Current-Max (IDM) :
9A
RoHS Status :
Non-RoHS Compliant
Terminal Position :
QUAD
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
20 mJ
Number of Elements :
1
ECCN Code :
EAR99
Datasheets
JANTXV2N6784U
Introducing Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6784U from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:18-CLCC, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:15, JANTXV2N6784U pinout, JANTXV2N6784U datasheet PDF, JANTXV2N6784U amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi JANTXV2N6784U ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 1.6 Ω @ 2.25A, 10V ±20V 8.6nC @ 10V 200V 18-CLCC

JANTXV2N6784U Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.25A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

JANTXV2N6784U Features


the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 2.25A
based on its rated peak drain current 9A.
a 200V drain to source voltage (Vdss)


JANTXV2N6784U Applications


There are a lot of Microsemi Corporation
JANTXV2N6784U applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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