JANTXV2N6782U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

7 mJ

Qualification Status :

Qualified

FET Type :

N-Channel

Series :

Military, MIL-PRF-19500/556

Packaging :

Bulk

Package / Case :

18-CLCC

Pin Count :

18

Power Dissipation-Max :

800mW Ta 15W Tc

Drain-source On Resistance-Max :

0.61Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

SOURCE

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Reference Standard :

MIL-19500

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Published :

1997

Pulsed Drain Current-Max (IDM) :

14A

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Vgs (Max) :

±20V

JESD-609 Code :

e0

Continuous Drain Current (ID) :

3.5A

Rds On (Max) @ Id, Vgs :

610m Ω @ 3.5A, 10V

Number of Terminations :

15

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Pbfree Code :

No

JESD-30 Code :

R-CQCC-N15

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

100V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

QUAD

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE