JANTXV2N6782

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Pins :

3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.5A

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.6Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Qualified

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

JESD-609 Code :

e0

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

14A

Reference Standard :

MIL-19500

Package / Case :

TO-205AF Metal Can

Series :

Military, MIL-PRF-19500/556

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100V

Pbfree Code :

No

Published :

1997

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Additional Feature :

RADIATION HARDENED

Transistor Element Material :

SILICON

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

610m Ω @ 3.5A, 10V

Power Dissipation-Max :

800mW Ta 15W Tc

Vgs (Max) :

±20V