JANTXV2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Reference Standard :

MIL-19500

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

12A

Packaging :

Bulk

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Terminal Form :

PIN/PEG

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.5Ohm

Drain to Source Voltage (Vdss) :

500V

Qualification Status :

Qualified

Case Connection :

Isolated

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Power Dissipation-Max :

4W Ta 150W Tc

Operating Mode :

ENHANCEMENT MODE

Series :

Military, MIL-PRF-19500/543

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500V

Number of Pins :

3

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Transistor Element Material :

SILICON

Published :

1997