JANTXV2N6766T1
- Mfr.Part #
- JANTXV2N6766T1
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 30A TO254AA
- Stock
- 33,012
- In Stock :
- 33,012
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Terminal Finish :
- TIN LEAD
- Series :
- Military, MIL-PRF-19500/543
- Continuous Drain Current (ID) :
- 30A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Pbfree Code :
- No
- Drain-source On Resistance-Max :
- 0.065Ohm
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Published :
- 1997
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Terminal Form :
- PIN/PEG
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200V
- JESD-609 Code :
- e0
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Bulk
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 30A, 10V
- Datasheets
- JANTXV2N6766T1
N-Channel Bulk 90m Ω @ 30A, 10V ±20V 115nC @ 10V 200V TO-254-3, TO-254AA (Straight Leads)
JANTXV2N6766T1 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JANTXV2N6766T1 Features
a continuous drain current (ID) of 30A
a 200V drain to source voltage (Vdss)
JANTXV2N6766T1 Applications
There are a lot of Microsemi Corporation
JANTXV2N6766T1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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