JANTXV2N6764

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

PIN/PEG

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reference Standard :

MILITARY STANDARD (USA)

Mounting Type :

Through Hole

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.055Ohm

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

70A

Packaging :

Bulk

Published :

1997

Additional Feature :

RADIATION HARDENED

Pin Count :

2

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

N-Channel

Factory Lead Time :

36 Weeks

Continuous Drain Current (ID) :

38A

Qualification Status :

Qualified

Reach Compliance Code :

not_compliant

Series :

Military, MIL-PRF-19500/543

Mount :

Through Hole

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-204AE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

65m Ω @ 38A, 10V

Number of Pins :

3

Number of Terminations :

2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

38A Tc

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

4W Ta 150W Tc