JANTXV2N6760

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Qualified

Additional Feature :

RADIATION HARDENED

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Pulsed Drain Current-Max (IDM) :

8A

Reference Standard :

MIL-19500

Pin Count :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Terminal Finish :

Tin/Lead (Sn/Pb)

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 5.5A, 10V

Power Dissipation-Max :

4W Ta 75W Tc

Pbfree Code :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Military, MIL-PRF-19500/542

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-204AA, TO-3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Surface Mount :

No

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

400V

Terminal Form :

PIN/PEG

Transistor Element Material :

SILICON

JESD-609 Code :

e0

JESD-30 Code :

O-MBFM-P2

Number of Elements :

1

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

400V

Operating Mode :

ENHANCEMENT MODE