JANTXV2N6756

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

14A

Mount :

Through Hole

Published :

1997

Series :

Military, MIL-PRF-19500/542

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Lead (Sn/Pb)

FET Type :

N-Channel

JESD-30 Code :

O-MBFM-P2

Case Connection :

DRAIN

Terminal Position :

BOTTOM

JESD-609 Code :

e0

ECCN Code :

EAR99

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Power Dissipation-Max :

4W Ta 75W Tc

Rds On (Max) @ Id, Vgs :

210m Ω @ 14A, 10V

Configuration :

Single

Transistor Element Material :

SILICON

Package / Case :

TO-204AA, TO-3

Pin Count :

2

Pulsed Drain Current-Max (IDM) :

30A

Reach Compliance Code :

not_compliant

Reference Standard :

MIL-19500/542

Additional Feature :

RADIATION HARDENED

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

PIN/PEG

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.18ohm

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ