JANTX2N7236U
- Mfr.Part #
- JANTX2N7236U
- Manufacturer
- Microsemi
- Package / Case
- TO-267AB
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 18A TO267AB
- Stock
- 29,605
- In Stock :
- 29,605
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Published :
- 1997
- Pbfree Code :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 18A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Packaging :
- Bulk
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 18A, 10V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 72A
- Terminal Form :
- NO LEAD
- Drain-source On Resistance-Max :
- 0.22Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-267AB
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 4W Ta 125W Tc
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/595
- Power Dissipation :
- 4W
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- JANTX2N7236U
P-Channel Bulk 220m Ω @ 18A, 10V ±20V 60nC @ 10V 100V TO-267AB
JANTX2N7236U Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.Its continuous drain current is 18A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
JANTX2N7236U Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 18A
based on its rated peak drain current 72A.
a 100V drain to source voltage (Vdss)
JANTX2N7236U Applications
There are a lot of Microsemi Corporation
JANTX2N7236U applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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