JANTX2N7236

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

18A

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Avalanche Energy Rating (Eas) :

500 mJ

Terminal Form :

PIN/PEG

FET Type :

P-Channel

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Configuration :

Single

Mounting Type :

Through Hole

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

220m Ω @ 18A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

4W Ta 125W Tc

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

S-CSFM-P3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.22Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Qualification Status :

Qualified

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Terminal Position :

Single

Pbfree Code :

yes

Series :

Military, MIL-PRF-19500/595

Power Dissipation :

4W

Contact Plating :

Lead, Tin

Number of Terminations :

3

Mount :

Through Hole

Vgs (Max) :

±20V