JANTX2N7227U
- Mfr.Part #
- JANTX2N7227U
- Manufacturer
- Microsemi
- Package / Case
- TO-267AB
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 14A TO267AB
- Stock
- 45,084
- In Stock :
- 45,084
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 14A
- Number of Elements :
- 1
- Packaging :
- Bulk
- Additional Feature :
- High Reliability
- Qualification Status :
- Qualified
- Published :
- 1997
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.415Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e0
- Vgs (Max) :
- ±20V
- Terminal Form :
- NO LEAD
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/592
- Reference Standard :
- MIL-19500
- JEDEC-95 Code :
- TO-276AB
- Drain to Source Voltage (Vdss) :
- 400V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Rds On (Max) @ Id, Vgs :
- 415m Ω @ 14A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Case Connection :
- DRAIN
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-267AB
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 56A
- DS Breakdown Voltage-Min :
- 400V
- Terminal Position :
- BOTTOM
- Datasheets
- JANTX2N7227U
N-Channel Bulk 415m Ω @ 14A, 10V ±20V 110nC @ 10V 400V TO-267AB
JANTX2N7227U Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 56A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
JANTX2N7227U Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)
JANTX2N7227U Applications
There are a lot of Microsemi Corporation
JANTX2N7227U applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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