JANTX2N7224
- Mfr.Part #
- JANTX2N7224
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 34A TO254AA
- Stock
- 8,851
- In Stock :
- 8,851
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 34A
- Rds On (Max) @ Id, Vgs :
- 81m Ω @ 34A, 10V
- Pbfree Code :
- No
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 4W Ta 150W Tc
- DS Breakdown Voltage-Min :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/592
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.07Ohm
- Pin Count :
- 3
- Number of Terminations :
- 3
- Terminal Form :
- PIN/PEG
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vgs (Max) :
- ±20V
- Qualification Status :
- Qualified
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Reference Standard :
- MIL-19500/592
- Datasheets
- JANTX2N7224
N-Channel Bulk 81m Ω @ 34A, 10V ±20V 125nC @ 10V 100V TO-254-3, TO-254AA (Straight Leads)
JANTX2N7224 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.Its continuous drain current is 34A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
JANTX2N7224 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 34A
a 100V drain to source voltage (Vdss)
JANTX2N7224 Applications
There are a lot of Microsemi Corporation
JANTX2N7224 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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