JANTX2N6802

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/557

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Packaging :

Bulk

Package / Case :

TO-205AF Metal Can

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.5A, 10V

Continuous Drain Current (ID) :

2.5A

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Terminal Position :

BOTTOM

Number of Pins :

3

Qualification Status :

Qualified

Power Dissipation :

800mW

Published :

1997

Power Dissipation-Max :

800mW Ta 25W Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Through Hole

JESD-609 Code :

e0

Terminal Form :

Wire