JANTX2N6798U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

98 mJ

Pin Count :

18

Case Connection :

SOURCE

RoHS Status :

Non-RoHS Compliant

Terminal Position :

QUAD

Rise Time :

50ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

18-CLCC

Rds On (Max) @ Id, Vgs :

420m Ω @ 5.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

42.07nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Reference Standard :

MIL-19500/557

Published :

1997

Mounting Type :

Surface Mount

Number of Terminations :

15

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Military, MIL-PRF-19500/557

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Power Dissipation-Max :

800mW Ta 25W Tc

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

JESD-30 Code :

R-CQCC-N15

Mount :

Surface Mount

Packaging :

Bulk

Drain-source On Resistance-Max :

0.42Ohm

Pulsed Drain Current-Max (IDM) :

22A

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Qualified

Continuous Drain Current (ID) :

5.5A