JANTX2N6796U

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Mfr.Part #
JANTX2N6796U
Manufacturer
Microsemi
Package / Case
18-CLCC
Datasheet
Download
Description
MOSFET N-CH 100V 8A 18ULCC
Stock
9,604
In Stock :
9,604

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
16
Case Connection :
SOURCE
Drain Current-Max (Abs) (ID) :
8A
Mounting Type :
Surface Mount
Contact Plating :
Lead, Tin
Qualification Status :
Qualified
Package / Case :
18-CLCC
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
32A
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.195Ohm
Rise Time :
75ns
Vgs (Max) :
±20V
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
134 mJ
Number of Elements :
1
Terminal Form :
NO LEAD
Pbfree Code :
No
Continuous Drain Current (ID) :
8A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
Non-RoHS Compliant
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
28.51nC @ 10V
Number of Terminations :
15
Terminal Finish :
Tin/Lead (Sn/Pb)
JESD-30 Code :
R-CQCC-N15
Terminal Position :
QUAD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
100V
Additional Feature :
High Reliability
Transistor Element Material :
SILICON
Reference Standard :
MIL-19500/557
DS Breakdown Voltage-Min :
100V
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
1997
Power Dissipation :
25W
Transistor Application :
SWITCHING
Number of Pins :
18
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Rds On (Max) @ Id, Vgs :
195m Ω @ 8A, 10V
Power Dissipation-Max :
800mW Ta 25W Tc
Series :
Military, MIL-PRF-19500/557
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e0
Packaging :
Bulk
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
JANTX2N6796U
Introducing Transistors - FETs, MOSFETs - Single Microsemi JANTX2N6796U from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:18-CLCC, Operating Temperature:-55°C~150°C TJ, Number of Terminations:15, Number of Pins:18, JANTX2N6796U pinout, JANTX2N6796U datasheet PDF, JANTX2N6796U amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi JANTX2N6796U ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC

JANTX2N6796U Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 134 mJ.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 8A.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

JANTX2N6796U Features


the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)


JANTX2N6796U Applications


There are a lot of Microsemi Corporation
JANTX2N6796U applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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