JANTX2N6796U
- Mfr.Part #
- JANTX2N6796U
- Manufacturer
- Microsemi
- Package / Case
- 18-CLCC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8A 18ULCC
- Stock
- 9,604
- In Stock :
- 9,604
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 16
- Case Connection :
- SOURCE
- Drain Current-Max (Abs) (ID) :
- 8A
- Mounting Type :
- Surface Mount
- Contact Plating :
- Lead, Tin
- Qualification Status :
- Qualified
- Package / Case :
- 18-CLCC
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 32A
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.195Ohm
- Rise Time :
- 75ns
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 134 mJ
- Number of Elements :
- 1
- Terminal Form :
- NO LEAD
- Pbfree Code :
- No
- Continuous Drain Current (ID) :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 28.51nC @ 10V
- Number of Terminations :
- 15
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- R-CQCC-N15
- Terminal Position :
- QUAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 100V
- Additional Feature :
- High Reliability
- Transistor Element Material :
- SILICON
- Reference Standard :
- MIL-19500/557
- DS Breakdown Voltage-Min :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 1997
- Power Dissipation :
- 25W
- Transistor Application :
- SWITCHING
- Number of Pins :
- 18
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Rds On (Max) @ Id, Vgs :
- 195m Ω @ 8A, 10V
- Power Dissipation-Max :
- 800mW Ta 25W Tc
- Series :
- Military, MIL-PRF-19500/557
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- JANTX2N6796U
N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC
JANTX2N6796U Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 134 mJ.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 8A.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
JANTX2N6796U Features
the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)
JANTX2N6796U Applications
There are a lot of Microsemi Corporation
JANTX2N6796U applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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