JANTX2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

800mW

Mounting Type :

Through Hole

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Pin Count :

2

Terminal Form :

Wire

Pbfree Code :

No

Published :

1997

Contact Plating :

Lead, Tin

Lead Free :

Contains Lead

Additional Feature :

High Reliability

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Power Dissipation-Max :

800mW Ta 25W Tc

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

Qualified

Current - Continuous Drain (Id) @ 25°C :

8A Tc

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

100V

Continuous Drain Current (ID) :

8A

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Packaging :

Bulk

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Number of Terminations :

3

JEDEC-95 Code :

TO-205AF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Series :

Military, MIL-PRF-19500/557