JANTX2N6788U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

76 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Rise Time :

70ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

18-CLCC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

4.5A

Pulsed Drain Current-Max (IDM) :

18A

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

QUAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Qualified

Power Dissipation-Max :

800mW Tc

DS Breakdown Voltage-Min :

100V

Pin Count :

18/15

Published :

1997

Number of Terminations :

15

Drain Current-Max (Abs) (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-CQCC-N15

Drain-source On Resistance-Max :

0.35Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Case Connection :

SOURCE

Packaging :

Bulk

FET Type :

N-Channel

Series :

Military, MIL-PRF-19500/555

Additional Feature :

HIGH RELIABILTY

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Mount :

Surface Mount

Reference Standard :

MIL-19500