JANTX2N6788

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

ECCN Code :

EAR99

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Series :

Military, MIL-PRF-19500/555

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Additional Feature :

RADIATION HARDENED

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Power Dissipation-Max :

800mW Tc

Qualification Status :

Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24A

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-205AF Metal Can

JESD-609 Code :

e0

Vgs (Max) :

±20V

Published :

1997

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Terminal Form :

Wire

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Rise Time :

70ns

Transistor Application :

SWITCHING

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Mounting Type :

Through Hole