JANTX2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

4W

Terminal Form :

PIN/PEG

Qualification Status :

Qualified

Continuous Drain Current (ID) :

12A

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Rise Time :

190ns

Pbfree Code :

No

Power Dissipation-Max :

4W Ta 150W Tc

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mount :

Through Hole

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.4Ohm

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

2

FET Type :

N-Channel

Series :

Military, MIL-PRF-19500/543

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Tin/Lead (Sn/Pb)

JEDEC-95 Code :

TO-3

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-204AE

Mounting Type :

Through Hole

Contact Plating :

Lead, Tin

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Published :

1997

RoHS Status :

Non-RoHS Compliant