JANTX2N6768

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

14A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

1997

Power Dissipation :

4W

Qualification Status :

Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Rise Time :

190ns

Pulsed Drain Current-Max (IDM) :

56A

Transistor Application :

SWITCHING

Pbfree Code :

No

Number of Elements :

1

JEDEC-95 Code :

TO-204AA

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

400V

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Terminal Form :

PIN/PEG

Operating Temperature :

-55°C~150°C TJ

Series :

Military, MIL-PRF-19500/543

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

700 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Package / Case :

TO-204AE

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max :

4W Ta 150W Tc

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

400m Ω @ 14A, 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

DS Breakdown Voltage-Min :

400V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Contact Plating :

Lead, Tin

Drain-source On Resistance-Max :

0.3Ohm

Pin Count :

2