JANTX2N6766T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/543

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.065Ohm

JESD-609 Code :

e0

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

4W Ta 150W Tc

Qualification Status :

Qualified

Terminal Finish :

TIN LEAD

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mount :

Through Hole

Case Connection :

Isolated

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Pin Count :

3

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Bulk

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

PIN/PEG

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Number of Terminations :

3

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Package / Case :

TO-254-3, TO-254AA (Straight Leads)