JANTX2N6766

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/543

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.065Ohm

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

PIN/PEG

Power Dissipation :

4W

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Qualification Status :

Qualified

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

4W Ta 150W Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

FET Type :

N-Channel

Mount :

Through Hole

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn/Pb)

Lead Free :

Contains Lead

DS Breakdown Voltage-Min :

200V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JESD-30 Code :

O-MBFM-P2

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Contact Plating :

Lead, Tin

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

30A

Package / Case :

TO-204AE

Published :

1997

Pin Count :

2