JANTX2N6764
- Mfr.Part #
- JANTX2N6764
- Manufacturer
- Microsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 38A TO3
- Stock
- 22,475
- In Stock :
- 22,475
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 38A, 10V
- Reference Standard :
- MIL-19500/543G
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Number of Terminations :
- 2
- Series :
- Military, MIL-PRF-19500/543
- JESD-609 Code :
- e0
- Pin Count :
- 2
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Number of Pins :
- 2
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Continuous Drain Current (ID) :
- 38A
- Mounting Type :
- Through Hole
- Published :
- 1997
- Power Dissipation-Max :
- 4W Ta 150W Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- Contact Plating :
- Lead, Tin
- Mount :
- Through Hole
- Package / Case :
- TO-204AE
- Drain-source On Resistance-Max :
- 0.055Ohm
- DS Breakdown Voltage-Min :
- 100V
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 190ns
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Terminal Position :
- BOTTOM
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Qualified
- Datasheets
- JANTX2N6764
N-Channel Bulk 65m Ω @ 38A, 10V ±20V 125nC @ 10V 100V TO-204AE
JANTX2N6764 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
JANTX2N6764 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 38A
a 100V drain to source voltage (Vdss)
JANTX2N6764 Applications
There are a lot of Microsemi Corporation
JANTX2N6764 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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