JANTX2N6764

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Mfr.Part #
JANTX2N6764
Manufacturer
Microsemi
Package / Case
TO-204AE
Datasheet
Download
Description
MOSFET N-CH 100V 38A TO3
Stock
22,475
In Stock :
22,475

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Manufacturer :
Microsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
not_compliant
Current - Continuous Drain (Id) @ 25°C :
38A Tc
Rds On (Max) @ Id, Vgs :
65m Ω @ 38A, 10V
Reference Standard :
MIL-19500/543G
FET Type :
N-Channel
RoHS Status :
Non-RoHS Compliant
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Packaging :
Bulk
Number of Terminations :
2
Series :
Military, MIL-PRF-19500/543
JESD-609 Code :
e0
Pin Count :
2
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Case Connection :
DRAIN
Number of Pins :
2
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Tin/Lead (Sn/Pb)
Continuous Drain Current (ID) :
38A
Mounting Type :
Through Hole
Published :
1997
Power Dissipation-Max :
4W Ta 150W Tc
Drain to Source Voltage (Vdss) :
100V
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Contact Plating :
Lead, Tin
Mount :
Through Hole
Package / Case :
TO-204AE
Drain-source On Resistance-Max :
0.055Ohm
DS Breakdown Voltage-Min :
100V
Number of Elements :
1
Terminal Form :
PIN/PEG
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
190ns
Avalanche Energy Rating (Eas) :
150 mJ
Terminal Position :
BOTTOM
Operating Mode :
ENHANCEMENT MODE
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Qualified
Datasheets
JANTX2N6764
Introducing Transistors - FETs, MOSFETs - Single Microsemi JANTX2N6764 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:2, Mounting Type:Through Hole, Package / Case:TO-204AE, JANTX2N6764 pinout, JANTX2N6764 datasheet PDF, JANTX2N6764 amp .Beyond Transistors - FETs, MOSFETs - Single Microsemi JANTX2N6764 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Bulk 65m Ω @ 38A, 10V ±20V 125nC @ 10V 100V TO-204AE

JANTX2N6764 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

JANTX2N6764 Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 38A
a 100V drain to source voltage (Vdss)


JANTX2N6764 Applications


There are a lot of Microsemi Corporation
JANTX2N6764 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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