JANTX2N6758

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Qualified

Published :

1997

Number of Terminations :

2

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pbfree Code :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

490m Ω @ 9A, 10V

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

36A

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.49Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-204AA, TO-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

JESD-609 Code :

e0

Power Dissipation-Max :

4W Ta 75W Tc

Continuous Drain Current (ID) :

9A

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation :

75W

Terminal Form :

PIN/PEG

Series :

Military, MIL-PRF-19500/542

Pin Count :

2

Drain Current-Max (Abs) (ID) :

9A

Terminal Position :

BOTTOM

Packaging :

Bulk

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Rise Time :

85ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Contact Plating :

Lead, Tin

Mounting Type :

Through Hole