JANTX2N6756
- Mfr.Part #
- JANTX2N6756
- Manufacturer
- Microsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14A TO204AA
- Stock
- 21,916
- In Stock :
- 21,916
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- O-MBFM-P2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Qualified
- Mount :
- Through Hole
- Published :
- 1997
- Drain-source On Resistance-Max :
- 0.18ohm
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 14A, 10V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 2
- Terminal Form :
- PIN/PEG
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Reference Standard :
- MIL-19500/542
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Packaging :
- Bulk
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 4W Ta 75W Tc
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Rise Time :
- 80ns
- Series :
- Military, MIL-PRF-19500/542
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 100V
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-204AA, TO-3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 56A
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- No
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Position :
- BOTTOM
- Continuous Drain Current (ID) :
- 14A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Datasheets
- JANTX2N6756
N-Channel Bulk 210m Ω @ 14A, 10V ±20V 35nC @ 10V 100V TO-204AA, TO-3
JANTX2N6756 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 56A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JANTX2N6756 Features
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 100V drain to source voltage (Vdss)
JANTX2N6756 Applications
There are a lot of Microsemi Corporation
JANTX2N6756 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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