JANSR2N3501L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e4

Package :

Bulk

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Polarity/Channel Type :

NPN

Configuration :

Single

Collector Current-Max (IC) :

0.3 A

JEDEC-95 Code :

TO-5

Packaging :

Tray

Package / Case :

TO-205AA, TO-5-3 Metal Can

Product Status :

Active

Power - Max :

1 W

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

400mV @ 15mA, 150mA

Technology :

Si

Voltage - Collector Emitter Breakdown (Max) :

150 V

Qualification Status :

Qualified

Number of Elements :

1

Transistor Element Material :

SILICON

DC Current Gain-Min (hFE) :

20

Case Connection :

COLLECTOR

Product Category :

Bipolar Transistors - BJT

Terminal Finish :

Gold (Au)

Additional Feature :

High Reliability

Series :

Military, MIL-PRF-19500/366

Collector-Emitter Voltage-Max :

150 V

Current - Collector Cutoff (Max) :

10μA (ICBO)

Brand :

Microchip / Microsemi

Supplier Device Package :

TO-5

Frequency - Transition :

-

JESD-30 Code :

O-MBCY-W3

Reference Standard :

MIL-19500; RH - 100K Rad(Si)

Current - Collector (Ic) (Max) :

300 mA

Product Type :

BJTs - Bipolar Transistors

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Operating Temperature :

-65°C ~ 200°C (TJ)

Number of Terminals :

3

RoHS :

Details

Terminal Position :

BOTTOM

Terminal Form :

Wire

Package Shape :

Round

Power Dissipation-Max (Abs) :

1 W