JANSR2N2222AUB/E10
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- Mfr.Part #
- JANSR2N2222AUB/E10
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 47,273
- In Stock ：
- 47,273
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip / Microsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Mounting Type :
- Surface Mount
- Series :
- -
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Package / Case :
- 3-SMD, No Lead
- Supplier Device Package :
- UB
- Product Status :
- Active
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Power - Max :
- 500 mW
- Product Category :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 50nA
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 800 mA
- Datasheets
- JANSR2N2222AUB/E10
NPN -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
JANSR2N2222AUB/E10 Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 50 V maximal voltage is present.
JANSR2N2222AUB/E10 Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
JANSR2N2222AUB/E10 Applications
There are a lot of Microchip Technology
JANSR2N2222AUB/E10 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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