JANSR2N2222A
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- Mfr.Part #
- JANSR2N2222A
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 36,310
- In Stock ：
- 36,310
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-SMD, No Lead
- Published :
- 2007
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/255
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Packaging :
- Tray
- Supplier Device Package :
- UB
- Current - Collector (Ic) (Max) :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Factory Lead Time :
- 33 Weeks
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA
- Operating Temperature :
- -65°C~200°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 500mW
- Transistor Type :
- NPN
- Datasheets
- JANSR2N2222A
NPN -65°C~200°C TJ 50nA 3-SMD, No Lead Tray Surface Mount
JANSR2N2222AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.This product comes in a UB device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).
JANSR2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
JANSR2N2222AUB Applications
There are a lot of Microsemi Corporation
JANSR2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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