JANSP2N3637UB/TR
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- Mfr.Part #
- JANSP2N3637UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 23,369
- In Stock ：
- 23,369
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Microchip Technology
- Current - Collector (Ic) (Max) :
- 1 A
- Brand :
- Microchip / Microsemi
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Frequency - Transition :
- -
- Series :
- Military, MIL-PRF-19500/357
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10μA
- Manufacturer :
- Microchip
- Power - Max :
- 1 W
- RoHS :
- N
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- UB
- Datasheets
- JANSP2N3637UB/TR
PNP -65°C ~ 200°C (TJ) 10μA 3-SMD, No Lead Surface Mount
JANSP2N3637UB/TR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 50mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 175 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSP2N3637UB/TR Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANSP2N3637UB/TR Applications
There are a lot of Microchip Technology
JANSP2N3637UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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