JANSP2N3501UB/TR
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- Mfr.Part #
- JANSP2N3501UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A UB
- Stock
- 6,006
- In Stock ：
- 6,006
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Tape and Reel (TR)
- Reach Compliance Code :
- Compliant
- Brand :
- Microchip / Microsemi
- Supplier Device Package :
- UB
- Series :
- Military, MIL-PRF-19500/366
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- RoHS :
- N
- Transistor Type :
- NPN
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector (Ic) (Max) :
- 300 mA
- Power - Max :
- 500 mW
- Subcategory :
- Transistors
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Packaging :
- Bulk
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Frequency - Transition :
- -
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- JANSP2N3501UB/TR
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) 3-SMD, No Lead Bulk Surface Mount
JANSP2N3501UB/TR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.The product comes in the supplier device package of UB.A 150 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANSP2N3501UB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of UB
JANSP2N3501UB/TR Applications
There are a lot of Microchip Technology
JANSP2N3501UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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