JANSM2N3636UB/TR
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- Mfr.Part #
- JANSM2N3636UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 10UA UB
- Stock
- 25,132
- In Stock ：
- 25,132
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/357
- Current - Collector (Ic) (Max) :
- 10 µA
- Current - Collector Cutoff (Max) :
- 10μA
- Power - Max :
- 1.5 W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Supplier Device Package :
- UB
- Package / Case :
- 4-SMD, No Lead
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Package :
- Bulk
- Datasheets
- JANSM2N3636UB/TR
PNP -65°C ~ 200°C (TJ) 10µA 4-SMD, No Lead Surface Mount
JANSM2N3636UB/TR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 50mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 50mA.This product comes in a UB device package from the supplier.Device displays Collector Emitter Breakdown (175 V maximal voltage).
JANSM2N3636UB/TR Features
the DC current gain for this device is 50 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANSM2N3636UB/TR Applications
There are a lot of Microchip
JANSM2N3636UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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