JANSL2N3635UB
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- Mfr.Part #
- JANSL2N3635UB
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 140V 10UA UB
- Stock
- 8,488
- In Stock ：
- 8,488
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 140 V
- Subcategory :
- Transistors
- Power - Max :
- 1.5 W
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA, 10V
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Current - Collector (Ic) (Max) :
- 10 µA
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/357
- Transistor Type :
- PNP
- Packaging :
- Bulk
- RoHS :
- N
- Current - Collector Cutoff (Max) :
- 10μA
- Package / Case :
- 4-SMD, No Lead
- Frequency - Transition :
- -
- Package :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Brand :
- Microchip / Microsemi
- Supplier Device Package :
- UB
- Datasheets
- JANSL2N3635UB
PNP -65°C ~ 200°C (TJ) 10µA 4-SMD, No Lead Bulk Surface Mount
JANSL2N3635UB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.The product comes in the supplier device package of UB.A 140 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANSL2N3635UB Features
the DC current gain for this device is 100 @ 10mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANSL2N3635UB Applications
There are a lot of Microchip
JANSL2N3635UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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