JANSL2N3057A
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- Mfr.Part #
- JANSL2N3057A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 6,443
- In Stock ：
- 6,443
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector Cutoff (Max) :
- 10nA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power - Max :
- 500 mW
- Manufacturer :
- Microchip
- Product Category :
- Microchip Technology
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Supplier Device Package :
- TO-46
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/391
- Package :
- Bulk
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector (Ic) (Max) :
- 1 A
- Brand :
- Microchip / Microsemi
- Datasheets
- JANSL2N3057A
NPN -65°C ~ 200°C (TJ) 10nA TO-206AB, TO-46-3 Metal Can Through Hole
JANSL2N3057A Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product package TO-46 comes from the supplier.Collector Emitter Breakdown occurs at 80 VV - Maximum voltage.
JANSL2N3057A Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-46
JANSL2N3057A Applications
There are a lot of Microchip Technology
JANSL2N3057A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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