JANS2N3499
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- Mfr.Part #
- JANS2N3499
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO39
- Stock
- 29,095
- In Stock ：
- 29,095
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 33 Weeks
- Polarity :
- NPN
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 100V
- Series :
- Military, MIL-PRF-19500/366
- Number of Elements :
- 1
- Max Operating Temperature :
- 200°C
- Power Dissipation :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Min Operating Temperature :
- -65°C
- Datasheets
- JANS2N3499
NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3499L Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-5.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JANS2N3499L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-5
JANS2N3499L Applications
There are a lot of Microsemi Corporation
JANS2N3499L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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